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| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR372 Repetitive voltage up to Mean forward current Surge current 3200 V 705 A 6 kA TARGET SPECIFICATION lug 02 - ISSUE : 0 Symbol Characteristic Conditions Tj [C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 3200 3300 50 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance 180 sin ,50 Hz, Th=55C, double side cooled 180 sin ,50 Hz, Tc=85C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 2000 A 150 705 695 5.6 157 x 1E3 25 150 150 2.84 1.00 0.920 A A kA As V V mohm F (AV) FSM I t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/s 150 s C A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR372 S 32 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 50.0 15 -30 / 8.0 85 150 / 9.0 C/kW C/kW C kN g VRRM/100 AR372 RECTIFIER DIODE TARGET SPECIFICATION lug 02 - ISSUE : 0 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 150 130 110 90 70 30 60 90 120 180 DC 50 0 200 400 600 IF(AV) [A] 800 1000 1200 PF(AV) [W] 2000 DC 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 30 60 120 90 180 800 1000 1200 IF(AV) [A] AR372 RECTIFIER DIODE TARGET SPECIFICATION lug 02 - ISSUE : 0 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 170 150 130 110 90 70 30 60 90 120 180 50 0 200 400 600 IF(AV) [A] 800 1000 1200 PF(AV) [W] 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 IF(AV) [A] 800 1000 1200 30 60 120 90 180 AR372 RECTIFIER DIODE TARGET SPECIFICATION lug 02 - ISSUE : 0 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 150 C SURGE CHARACTERISTIC Tj = 150 C 2500 6 5 4 ITSM [kA] 0 0.5 1 1.5 2 2.5 3 3 2 2000 Forward Current [A] 1500 1000 500 1 0 1 10 n cycles 100 Forward Voltage [V] 0 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 60.0 50.0 Zth j-h [C/kW] 40.0 30.0 20.0 10.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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